Giant negative Goos-Hanchen shifts for a photonic crystal with a negative effective index
Giant negative Goos-Hanchen shifts for a photonic crystal with a negative effective index
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DOI：
10.1364/oe.14.003024
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发表时间：
2006-04-03
期刊：
影响因子：
3.8
通讯作者：
He, SL
中科院分区：
文献类型：
--
作者：
He, JL;Yi, J;He, SL
研究了单色高斯光束经负折射率光子晶体全反射后的古斯-汉臣效应。通过选择合适的均匀包层厚度，可以获得巨大的负GH横向位移，并且即使对于非常窄的入射光束，全反射光束也保持良好轮廓的单光束。GH的横向位移对包层折射率的变化非常敏感，利用这一特性可以对电子束进行测量。G.开关应用。(c)2006年美国光学学会。
The Goos-Hanchen effects are investigated for a monochromatic Gaussian beam totally reflected by a photonic crystal with a negative effective index. By choosing an appropriate thickness for the homogeneous cladding layer, a giant negative GH lateral shift can be obtained and the totally reflected beam retains a single beam of good profile even for a very narrow incident beam. The GH lateral shift can be very sensitive to the change of the refractive index of the claddin layer, and this property can be utilized for e. g. the switching applications. (c) 2006 Optical Society of America.