Surface studies of diamond‐like carbon films grown by plasma‐enhanced chemical vapor deposition
Surface studies of diamond‐like carbon films grown by plasma‐enhanced chemical vapor deposition
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DOI：
10.1002/sia.3371
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发表时间：
2010-12
影响因子：
1.7
通讯作者：
R. Maheswaran;R. Sivaraman;O. Mahapatra;P. Rao;C. Gopalakrishnan;D. J. Thiruvadigal
中科院分区：
文献类型：
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作者：
R. Maheswaran;R. Sivaraman;O. Mahapatra;P. Rao;C. Gopalakrishnan;D. J. Thiruvadigal
研究了等离子体增强化学气相沉积(PECVD)法制备类金刚石(DLC)薄膜时，等离子体压力对其表面形貌的影响。在不同的甲烷-Ar比下生长了DLC薄膜。研究了颗粒尺寸和表面粗糙度随等离子体压力的变化规律。用原子力显微镜观察了薄膜的表面形貌和表面粗糙度。用拉曼光谱对薄膜的表面进行了表征，研究了薄膜中碳的杂化情况，从而评价了薄膜的碳组成。结果表明，在低Ar气压下生长的薄膜在衬底上的分布更加均匀。拉曼光谱表明，随着等离子体压力的增加，生长的薄膜中SP3杂化碳的含量成比例增加。版权所有©2010 John Wiley&Sons，Ltd.
The influence of plasma pressure on the surface morphology of diamond‐like carbon (DLC) films, synthesized by plasma enhanced chemical vapour deposition (PECVD) has been investigated. The DLC films have been grown at different methane–argon ratios. The grain size and the surface roughness have been studied as a function of plasma pressure. The morphology and surface roughness of the films have been inspected by atomic force microscopy. The film surface has also been characterized by Raman spectroscopy to study the hybridization of carbon in the film so as to evaluate its carbon composition. The results confirm that the film grown at low argon pressure has more uniform distribution on the substrate. The Raman spectrum indicates that increase in plasma pressure leads to a proportional increase in the amount of sp3 hybridized carbon in the grown film. Copyright © 2010 John Wiley & Sons, Ltd.