Oxidation behavior of Al4SiC4 ceramic up to 1700 °C
Oxidation behavior of Al4SiC4 ceramic up to 1700 °C
复制标题
DOI：
10.1016/j.corsci.2006.10.028
复制
发表时间：
2007-05
影响因子：
8.3
通讯作者：
Xiaoxiao Huang;G. Wen;X. Cheng;B. Zhang
中科院分区：
文献类型：
--
作者：
Xiaoxiao Huang;G. Wen;X. Cheng;B. Zhang
研究了Al{sub 4}SiC{sub 4}陶瓷在1200 ~ 1700 {sup o}C空气中10 ~ 20 h的等温氧化行为。结果表明，该材料在1200 {sup o}C ~ 1600 {sup o}C范围内具有良好的抗氧化性能，氧化动力学服从抛物线规律，活化能为220 {+-}20 kJ mol{sup -1}。在温度范围内，氧化层由密度较高的外氧化层、具有少量大孔的中氧化层和靠近基体的具有许多小孔的反应层组成。中间氧化层中存在大量孔隙。利用扫描电镜（SEM）观察了氧化层的表面形貌和横截面形貌，并分析了氧化层的形成机理。
Isothermal oxidation behavior of Al{sub 4}SiC{sub 4} ceramics at the temperature range from 1200 {sup o}C to 1700 {sup o}C in air for 10-20 h was investigated. The results indicated that this material had an excellent oxidation resistance from 1200 {sup o}C to 1600 {sup o}C, and the kinetics of oxidation obeyed the parabolic law with an activation energy of 220 {+-} 20 kJ mol{sup -1}. The oxide scales consisted of an outer oxide layer with higher density, a middle oxide layer with a few of large size pores and a reaction layer which is near to the matrix with a number of small size pores over the temperature ranges. A number of pores exist in the middle oxide scale. The oxide surface and cross-sectional morphologies were observed by scanning electron microscope (SEM) technique and the formation mechanism of the oxidation layers was also analyzed.