Hot electron photodetection with spectral selectivity in the C-band using a silicon channel-separated gold grating structure
Hot electron photodetection with spectral selectivity in the C-band using a silicon channel-separated gold grating structure
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DOI：
10.1088/2632-959x/ab82e4
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发表时间：
2020-04
期刊：
影响因子：
3
通讯作者：
Hongbin Xiao;Shu-cheng Lo;Yi-Hsin Tai;J. K. Clark;Y. Ho;Chih-Zong Deng;P. Wei;J. Delaunay
中科院分区：
文献类型：
--
作者：
Hongbin Xiao;Shu-cheng Lo;Yi-Hsin Tai;J. K. Clark;Y. Ho;Chih-Zong Deng;P. Wei;J. Delaunay
基于热电子的光探测由于其能够在半导体材料的亚带隙能量下进行光探测而引起了人们的兴趣。含热电子的硅基光电探测器已成为近红外（NIR）光电探测中研究最广泛的器件之一。然而，大多数报道的硅基近红外光电探测器的带宽较宽，其响应率随目标波长变化缓慢，这限制了它们作为光谱选择性光电探测器的实用性。本文报道了一种在c波段（1530-1565 nm）具有光谱选择性光探测能力的硅通道分离金光栅结构。该结构的响应度从1530 nm处的64.5 nA mW - 1下降到1565 nm处的19.0 nA mW - 1，在c波段上变化了70.5%。该器件的窄带、易于调谐谐振波长和光谱选择性不仅有助于弥合光探测光学和电气系统之间的差距，而且在传感、成像和通信系统等其他潜在应用中也是有益的。
Photodetection based on hot electrons is attracting interest due to its capability of enabling photodetection at sub-bandgap energies of semiconductor materials. Si-based photodetectors incorporating hot electrons have emerged as one of the most widely studied devices used for near infrared (NIR) photodetection. However, most reported Si-based NIR photodetectors have broad bandwidths with responsivities that change slowly with the target wavelength, limiting their practicality as spectrally selective photodetectors. This paper reports a Si channel-separated Au grating structure that exhibits the spectrally selective photodetection in the C-band (1530–1565 nm). The measured responsivity of the structure drops from 64.5 nA mW−1 at 1530 nm to 19.0 nA mW−1 at 1565 nm, representing a variation of 70.5% over the C-band. The narrowband, ease of tuning the resonant wavelength, and spectral selectivity of the device not only help bridge the gap between the optical and electrical systems for photodetection but are also beneficial in other potential applications, such as sensing, imaging, and communications systems.