Quantized Hall effect and quantum phase transitions in coupled two-layer electron systems.
Quantized Hall effect and quantum phase transitions in coupled two-layer electron systems.
复制标题
耦合两层电子系统中的量子化霍尔效应和量子相变。
DOI:
10.1103/physrevb.47.4394
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发表时间:
1993
期刊:
影响因子:
--
通讯作者:
Xie
中科院分区:
文献类型:
--
作者:
He;Das Sarma S;Xie
We study the nature of the many-body electron states (and quantum phase transitions between them) in a double-quantum-well structure under a strong external magnetic field as a function of the materials parameters that define the two-layer system, namely, the thickness of individual layers, the separation between them, the individual well potentials confining the electrons, and the potential barrier between them. Motivated by two recent experiments, we consider two different situations, one with (almost) no quantum tunneling between the wells, and the other with substantial interwell quantum tunneling. We use the spherical system finite-size exact diagonalization technique for our calculations. By calculating the overlap of our exact small-system numerical wave functions with various (postulated) analytic wave functions, we comment on the nature of the incompressibility for various Landau-level filling factors (\ensuremath{\nu}). We investigate, in particular details, the possibility of \ensuremath{\nu}=1/2 (i.e., 1/4 average occupancy in each well), and, 1 (i.e., 1/2 occupancy in each well) incompressible states where \ensuremath{\nu} is the total filling factor for the system. We also provide results for the \ensuremath{\nu}=2/3 situation. Our conclusion, based on our use of realistic system parameters in our calculations, is that in both the recent experimental realizations of the \ensuremath{\nu}=1/2 fractional quantum Hall effect, the relevant ground state is the so-called ``331'' state which is stabilized by the competition between intrawell and interwell electron-electron correlations.