Photoinduced recovery of photoquenched hopping conduction in neutron-irradiated semi-insulating GaAs.
Photoinduced recovery of photoquenched hopping conduction in neutron-irradiated semi-insulating GaAs.
复制标题
中子辐照半绝缘 GaAs 中光猝灭跳变传导的光诱导恢复。
DOI：
10.1103/physrevb.45.6251
复制
发表时间：
1992
期刊：
影响因子：
--
通讯作者：
Taniguchi
中科院分区：
文献类型：
--
作者：
Kuriyama;Yokoyama;Taniguchi
在用1410 nm波长的激光二极管光预照射的中子辐照半绝缘GaAs中观察到了隧道辅助跳跃导电中从完全猝灭态开始的光致恢复。这种恢复现象支持了这样的解释，即中子辐照后在250 ℃左右热退火产生的EL2类缺陷被识别为天然EL2缺陷。根据使用不同波长的光响应研究，中子诱导的EL2缺陷可能具有几个可淬灭的组分。
The photoinduced recovery that starts from the full quenched state in tunneling-assisted hopping conduction has been observed in neutron-irradiated semi-insulating GaAs preilluminated with laser-diode light of 1410-nm wavelength. This recovery phenomenon supports the interpretation that the EL2-like defects created by thermal annealing at around 250 C after neutron irradiation are to be identified as the native EL2 defect. According to the photoresponse study using different wavelengths, neutron-induced EL2 defects are likely to have several quenchable components.