High-Integrity Finishing of 4H-SiC (0001) by Plasma-Assisted Polishing
High-Integrity Finishing of 4H-SiC (0001) by Plasma-Assisted Polishing
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DOI：
10.4028/www.scientific.net/amr.126-128.423
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发表时间：
2010-08
期刊：
影响因子：
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通讯作者：
K. Yamamura;T. Takiguchi;M. Ueda;A. Hattori;N. Zettsu
中科院分区：
文献类型：
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作者：
K. Yamamura;T. Takiguchi;M. Ueda;A. Hattori;N. Zettsu
提出了一种结合常压等离子体辐照的难加工材料光整加工新方法。氦系水蒸气等离子体的照射有效地氧化了单晶4 H-SiC（0001）的表面，使用氧化铝陶瓷球的球盘试验显示，通过水蒸气等离子体的照射进行表面改性的SiC的磨损率是未进行等离子体照射的表面的磨损率的20倍。使用CeO 2磨料等离子体辅助抛光使我们能够提高SiC的表面粗糙度，而不引入晶体亚表面损伤，并获得了粗糙度小于0.3 nm rms的无划痕表面。
A novel machining method combined with the irradiation of atmospheric pressure plasma was proposed for the finishing of difficult-to-machine materials. The irradiation of helium-based water vapor plasma efficiently oxidized the surface of single-crystal 4H-SiC (0001), and a ball-on-disc test using an alumina ceramic ball revealed that the wear rate of SiC, the surface of which was modified by the irradiation of water vapor plasma, is 20-fold higher than that of the surface without plasma irradiation. Plasma-assisted polishing using CeO2 abrasives enabled us to improve the surface roughness of SiC without introducing crystallographical subsurface damage, and a scratch-free surface with a roughness of less than 0.3 nm rms was obtained.