A Robust 10 kV SiC MOSFET Gate Driver with Fast Overcurrent Protection Demonstrated in a MMC Submodule
A Robust 10 kV SiC MOSFET Gate Driver with Fast Overcurrent Protection Demonstrated in a MMC Submodule
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在 MMC 子模块中展示具有快速过流保护功能的稳健 10 kV SiC MOSFET 栅极驱动器
DOI：
10.1109/apec39645.2020.9124533
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
William Giewont
中科院分区：
文献类型：
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作者：
Xingxuan Huang;Shiqi Ji;J. Palmer;Li Zhang;Dingrui Li;Fred Wang;L. Tolbert;William Giewont
本文重点介绍了一种鲁棒的10 kV SiC MOSFET栅极驱动器与改进的过流保护去饱和保护方案。该栅极驱动器是为模块化多电平换流器（MMC）子模块中的10 kV/20 A SiC MOSFET设计的。该栅极驱动器具有短路保护、每个开关周期的状态反馈、死区插入和欠压锁定（UVLO）功能，以支持MOSFET和转换器的稳定连续工作。详细阐述了实现这些功能的实际设计考虑。在数字消隐时间为600 ns的情况下，改进后的减饱和保护在硬开关故障（HSF）下的响应时间<350 ns，在带载故障（FUL）和闪络故障下的响应时间<200 ns。栅极驱动器的所有功能都在额定直流母线电压为6.5 kV的MMC子模块中得到充分验证。
This paper focuses on a robust 10 kV SiC MOSFET gate driver with an improved desaturation protection scheme for overcurrent protection. The gate driver is designed for 10 kV/20 A SiC MOSFETs in a modular multilevel converter (MMC) submodule. The gate driver has short circuit protection, status feedback in every switching cycle, dead time insertion, and undervoltage lockout (UVLO) function to support robust continuous operation of the MOSFET and converter. Practical design considerations are elaborated to achieve these functions. With a digital blanking time of 600 ns, the improved desat protection achieves a response time of <350 ns under hard switching fault (HSF), and a response time of <200 ns under fault under load (FUL) and flashover fault. All functions of the gate driver are fully validated in a MMC submodule with a rated dc-link voltage of 6.5 kV.