Fabrication and properties of sol-gel-derived BiScO3-PbTiO3 thin films
Fabrication and properties of sol-gel-derived BiScO3-PbTiO3 thin films
复制标题
溶胶-凝胶法 BiScO3-PbTiO3 薄膜的制备及性能
DOI：
10.1111/j.1551-2916.2006.01031.x
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发表时间：
2006
影响因子：
3.9
通讯作者：
Long
中科院分区：
文献类型：
--
作者：
Hai Wen;Xiao;Long
采用水溶胶-凝胶法制备了在Pt(111)/Ti/SiO2/Si衬底上靠近致形相边界的BSPT薄膜。薄膜具有良好的结晶质量和致密均匀的微观结构，平均晶粒尺寸为50 nm。研究了溶胶-凝胶衍生BSPT薄膜的介电、铁电和压电性能。得到了74 μC/cm2的剩余极化和177 kV/cm的矫顽力场。通过扫描探针显微系统测量，在2v下，局部有效压电系数d*33为23 pC/N。介电峰出现在435℃，比Pb(Ti, Zr)O3薄膜的介电峰高80℃。
BiScO3–PbTiO3 (BSPT) thin films near the morphotropic phase boundary were successfully fabricated on Pt(111)/Ti/SiO2/Si substrates via an aqueous sol–gel method. The thin films exhibited good crystalline quality and dense, uniform microstructures with an average grain size of 50 nm. The dielectric, ferroelectric, and piezoelectric properties of the sol–gel-derived BSPT thin films were investigated. A remanent polarization of 74 μC/cm2 and a coercive field of 177 kV/cm were obtained. The local effective piezoelectric coefficient d*33 was 23 pC/N at 2 V, measured by a scanning probe microscopy system. The dielectric peak appeared at 435°C, which was 80°C higher than that of Pb(Ti, Zr)O3 thin films.