High-accuracy, high-reflectivity phase conjugation at 1.06 μm by four-wave mixing in photorefractive gallium arsenide
High-accuracy, high-reflectivity phase conjugation at 1.06 μm by four-wave mixing in photorefractive gallium arsenide
复制标题
通过光折变砷化镓中的四波混频实现 1.06 μm 的高精度、高反射率相位共轭
DOI：
10.1364/josab.5.002467
复制
发表时间：
1988
影响因子：
1.9
通讯作者：
G. Valley
中科院分区：
文献类型：
--
作者：
M. Klein;S. McCahon;T. Boggess;G. Valley
我们用20 kHz交流方波电场提高了GaAs的光束耦合增益和1.06 μm简并四波混频反射率。当光栅周期为9 μm，施加电压为3.2kV，宽度为0.4cm时，在稳态下测得的最大四波混频反射率为15%。理论结果预测，在8 kV/cm的电场下，反射率值会明显更高;这种差异的根源被认为是空间电荷效应，它阻止了我们获得晶体内部的全部电场。我们还测量了在反向泵浦光的开关期间的510%的瞬态反射率。最后，通过活塞误差修正和共轭保真度的测量，确定了波前反转的精度。
We have used a 20-kHz ac square-wave electric field to enhance the beam-coupling gain and the degenerate four-wave mixing reflectivity of photorefractive GaAs at 1.06 μm. The largest measured four-wave mixing reflectivity in the steady state was 15% at a grating period of 9 μm and an applied voltage of 3.2 kV across 0.4 cm. Theoretical results predict substantially higher reflectivity values for a field of 8 kV/cm; the origin of this discrepancy is thought to be space-charge effects that prevent us from obtaining the full field inside the crystal. We have also measured a transient reflectivity of 510% during the switch on of the backward pump beam. Finally, we have determined the accuracy of wave-front reversal through measurements of piston-error correction and conjugation fidelity.