Superconductivity of Tin or Tellurium Doped Bismuth at Ultra Low Temperature
Superconductivity of Tin or Tellurium Doped Bismuth at Ultra Low Temperature
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锡或碲掺杂铋的超低温超导性
DOI：
10.1143/jpsj.52.3579
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发表时间：
1983
影响因子：
1.7
通讯作者：
H. Nagano
中科院分区：
文献类型：
--
作者：
A. Furukawa;Y. Oda;H. Nagano
用稀释制冷机测量了Sn掺杂Bi（0.036- 0.183at%Sn）和Te掺杂Bi（0.289at%Te）的交流磁化率。宽的超导转变发生在低于约0.1 K，但没有完美的迈斯纳效应被视为下降到测量的最低温度。磁化率的大小减少时，初级交流磁场的增加或直流磁场的增加，虽然对后者的依赖性小于前者。在不同Sn浓度的样品上观察到相同的结果，除了抗磁化率随着Sn浓度变小而变小。
Ac magnetic susceptibility of Sn doped Bi (0.036–0.183 at%Sn) and Te doped Bi (0.289 at%Te) have been measured at low temperature down to 4.5 mK by the use of dilution refrigerator. Broad superconducting transition occurs below about 0.1 K, but no perfect Meissner effect is seen down to the measured lowest temperature. Magnitude of susceptibility decreases when the primary ac magnetic field increases or when dc magnetic field increases, although dependence on the latter is smaller than on the former. The same results are seen on the specimens of different concentrations of Sn except that the diamagnetic susceptibility becomes smaller as the concentration of Sn becomes smaller.