A high-power GaAlAs superluminescent diode with an antireflective window structure
A high-power GaAlAs superluminescent diode with an antireflective window structure
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一种具有抗反射窗结构的高功率GaAlAs超辐射发光二极管
DOI：
10.1109/3.89979
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发表时间：
1991
影响因子：
2.5
通讯作者：
I. Teramoto
中科院分区：
文献类型：
--
作者：
K. Tateoka;H. Naito;M. Yuri;M. Kume;K. Hamada;H. Shimizu;M. Kazumura;I. Teramoto
提出了一种新型的高功率GaAlAs超辐射发光二极管（SLD）结构，该结构在SLD的背面引入了抗反射（AR）窗口区。向后传播的光束从有源层的边缘发射并在窗口区域中发散。然后，光束在AR涂覆的后端面处仅反射很小的百分比，其中一小部分耦合到有源层中。因此，这种窗口结构降低了有源层和窗口区之间界面处的反射率，从而成功地抑制了激光振荡。在基模稳定的情况下，获得了高达50 mW的SLD输出功率。在较宽的输出功率范围内，半峰带宽约为15 nm. >
A novel high-power GaAlAs superluminescent diode (SLD) structure that introduces an antireflective (AR) window region into the rear side of the SLD is proposed. The light beam which travels backward is emitted from the edge of the active layer and diverges in the window region. Then the beam is reflected at the AR-coated rear facet only by a small percentage, a fraction of which couples into the active layer. Thus, this window structure gives a reduction of the reflectivity at the interface between the active layer and the window region so that lasing oscillation is successfully suppressed. An SLD operation of output power as high as 50 mW is obtained with a stable fundamental spatial mode. The spectral bandwidth at half maximum is about 15 nm over a wide output power range. >