Fabrication and electroluminescence of double-layered organic light-emitting diodes with the Al2O3/Al cathode
Fabrication and electroluminescence of double-layered organic light-emitting diodes with the Al2O3/Al cathode
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DOI：
10.1063/1.118539
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发表时间：
1997-03-10
影响因子：
4
通讯作者：
Shinar, J
中科院分区：
文献类型：
--
作者：
Li, F;Tang, H;Shinar, J
描述了可控Al2O3缓冲层对真空蒸发王水处理的氧化铟锡(ITO)/三苯基二胺(TPD)/8-三羟基喹啉铝Alq(3)/Al2O3/Al发光二极管性能的影响。研究发现，适当厚度的缓冲层可以显著增强电流注入和电致发光输出。这种增强被认为是由于TPD/Alq(3)界面附近的载流子密度增加，这是由于电子隧穿增强，以及Alq(3)/Al界面固有的激子猝灭间隙态的消除。(C) 1997年美国物理研究所。
The effects of a controlled Al2O3 buffer layer on the behavior of highly efficient vacuum evaporated aqua-regia-treated indium tin oxide (ITO)/triphenyl diamine (TPD)/8-tris-hydroxyquino-line aluminum Alq(3)/Al2O3/Al light-emitting diodes are described. It is found that, with a buffer layer of suitable thickness, both current injection and electroluminescence output are significantly enhanced. The enhancement is believed to be due to increased charge carrier density near the TPD/Alq(3) interface that results from enhanced electron tunneling, and removal of exciton-quenching gap states that are intrinsic to the Alq(3)/Al interface. (C) 1997 American Institute of Physics.