The search for the most conductive metal for narrow interconnect lines
The search for the most conductive metal for narrow interconnect lines
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DOI:
10.1063/1.5133671
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发表时间:
2020-02-07
影响因子:
3.2
通讯作者:
Gall, Daniel
中科院分区:
文献类型:
--
作者:
Gall, Daniel
A major challenge for the continued downscaling of integrated circuits is the resistivity increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the potential to mitigate this resistivity bottleneck by either (a) facilitating specular electron interface scattering and negligible grain boundary reflection or (b) a low bulk mean free path that renders resistivity scaling negligible. Recent research suggests that specular electron scattering at the interface between the interconnect metal and the liner layer requires a low density of states at the interface and in the liner (i.e., an insulating liner) and either a smooth epitaxial metal-liner interface or only weak van der Waals bonding as typical for 2D liner materials. The grain boundary contribution to the room-temperature resistivity becomes negligible if the grain size is large (>200 nm or ten times the linewidth for wide or narrow conductors, respectively) or if the electron reflection coefficient is small due to low-energy boundaries and electronic state matching of neighboring grains. First-principles calculations provide a list of metals (Rh, Pt, Ir, Nb, Ru, Ni, etc.) with a small product of the bulk resistivity times the bulk electron mean free path rho(o) x lambda, which is an indicator for suppressed resistivity scaling. However, resistivity measurements on epitaxial layers indicate considerably larger experimental rho(o) x lambda values for many metals, indicating the breakdown of the classical transport models at small (