ANISOTROPY OF ELECTRICAL CONDUCTIVITY IN BISMUTH TELLURIDE
ANISOTROPY OF ELECTRICAL CONDUCTIVITY IN BISMUTH TELLURIDE
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DOI：
10.1088/0370-1328/78/5/329
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发表时间：
1961-01-01
影响因子：
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通讯作者：
BOWLEY, AE
中科院分区：
文献类型：
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作者：
DELVES, RT;HAZELDEN, DW;BOWLEY, AE
用四探针法测定了bi2te3在室温下电导率的各向异性。未掺杂p型材料的各向异性比接近3.0；对于碘掺杂的n型材料，它明显更高，并随着杂质浓度的增加而增加。对高掺杂n型bi2te3的磁效应测量表明，各向异性比的变化可以用动量空间中等能面形状随载流子密度的增加而变化来解释。
The anisotropy of the electrical conductivity of Bi2Te3at room temperature has been determined by a four-probe method. The anisotropy ratio for undoped p-type material is close to 3.0; for iodine-doped n-type material it is appreciably higher and increases with the impurity concentration. Measurements of the galvanomagnetic effects in highly doped n-type Bi2Te3have shown that the observed variation of the anisotropy ratio can be interpreted in terms of a change of shape of the equi-energy surfaces in momentum space with increasing density of charge carriers.