The study of the effects of cooling conditions on high quality graphene growth by the APCVD method.
The study of the effects of cooling conditions on high quality graphene growth by the APCVD method.
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DOI：
10.1039/c3nr00524k
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发表时间：
2013-06
期刊：
影响因子：
6.7
通讯作者：
K. Xiao;Huaqiang Wu;Hongming Lv;Xiao-Shan Wu;He Qian
中科院分区：
文献类型：
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作者：
K. Xiao;Huaqiang Wu;Hongming Lv;Xiao-Shan Wu;He Qian
研究了冷却条件对常压化学气相沉积(APCVD)法在铂上生长石墨烯的影响。研究发现，冷却条件是更好地控制石墨烯薄膜覆盖率、厚度和均匀性的关键。在不同的冷却速度和气体气氛下进行了一系列实验。采用扫描电子显微镜、拉曼光谱、原子力显微镜和透射电子显微镜等表征手段对石墨烯的形貌和质量进行了表征。提出了一个“三个竞争反应”机制来解释冷却条件的影响。在优化生长条件的基础上，采用APCVD方法在铂衬底上生长了高覆盖率的单层石墨烯薄膜。制作了背栅场效应晶体管，测得载流子迁移率约为1600 cm(2)V(-1)，S(-1)。
The effects of cooling conditions on graphene growth by the atmospheric pressure chemical vapor deposition (APCVD) method on platinum are investigated. It is found that the cooling conditions are the key to better control of the coverage, thickness and uniformity of the graphene films. A series of experiments were carried out with different cooling rates and gas atmospheres. Various characterization techniques (SEM, Raman, AFM and TEM) were applied to examine the graphene morphology and quality. A "three competitive reactions" mechanism is proposed to explain the cooling condition effects. Based on optimized growth conditions, a high-coverage, single-layer graphene film could be grown on Pt using the APCVD method. Back-gated field effect transistors were fabricated and the measured carrier mobility is about 1600 cm(2) V(-1) s(-1).