Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling
Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling
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DOI：
10.1103/physrevb.66.153305
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发表时间：
2002-10-15
影响因子：
3.7
通讯作者：
Yablonovitch, E
中科院分区：
文献类型：
--
作者：
Neogi, A;Lee, CW;Yablonovitch, E
使用时间分辨光致发光测量，当自发发射与银表面等离子体共振耦合时，In0.18Ga0.82N/GaN 量子阱 (QW) 中的复合率大大提高。增强的自发发射到表面等离子体的速率比 QW 自发发射到自由空间的速率快 92 倍。基于费米黄金法则的计算表明，增强效果对银的厚度非常敏感，并且表明将量子阱放置在更靠近表面金属涂层的地方可能会获得更大的增强效果。
Using time-resolved photoluminescence measurements, the recombination rate in an In0.18Ga0.82N/GaN quantum well (QW) is shown to be greatly enhanced when spontaneous emission is resonantly coupled to a silver surface plasmon. The rate of enhanced spontaneous emission into the surface plasmon was as much as 92 times faster than QW spontaneous emission into free space. A calculation, based on Fermi's golden rule, reveals that the enhancement is very sensitive to silver thickness and indicates even greater enhancements are possible for QW's placed closer to the surface metal coating.