Conversion electron Mössbauer spectroscopy of epitaxial Co2Cr0.6Fe0.4Al thin films
Conversion electron Mössbauer spectroscopy of epitaxial Co2Cr0.6Fe0.4Al thin films
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外延Co2Cr0.6Fe0.4Al薄膜的转换电子穆斯堡尔谱
DOI：
10.1063/1.2952760
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发表时间：
2008
影响因子：
4
通讯作者：
C. Felser
中科院分区：
文献类型：
--
作者：
V. Ksenofontov;C. Herbort;M. Jourdan;C. Felser
Heusler半金属在自旋电子学应用中具有很好的前景。利用转换电子穆斯堡尔谱研究了典型化合物Co2Cr0.6Fe0.4Al（CCFA）的外延薄膜，以阐明影响自旋极化的因素。采用射频磁控溅射法在MgO基片上沉积了CCFA薄膜，并在MgO基片上分别添加了Fe缓冲层和Fe缓冲层。退火改善了它们的晶体学有序性，导致Fe原子从Fe缓冲层扩散到CCFA中，并有利于Co-Fe无序。所列出的因素是可能的原因，增加和随后减少的隧道CCFA薄膜中观察到的整个退火温度范围内的磁阻。
Heusler half-metals are promising for spintronic applications. Epitaxial thin films of the exemplar compound Co2Cr0.6Fe0.4Al (CCFA) were investigated using conversion electron Mossbauer spectroscopy to clarify the factors influencing the spin polarization. CCFA films were deposited by rf magnetron sputtering on MgO substrates with and without an Fe buffer layer. Annealing improves their crystallographic order, causes the diffusion of Fe atoms from the Fe buffer layer into the CCFA, and favors the Co–Fe disorder. The listed factors are possible reasons for the increase and subsequent reduction of the tunneling magnetoresistance in CCFA thin films observable across the annealing temperature range.