Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium
Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium
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高掺杂锗铁电硅掺杂 HfO2 器件特性
DOI：
10.1109/led.2015.2445352
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发表时间：
2015
影响因子：
4.9
通讯作者：
T. Nishida
中科院分区：
文献类型：
--
作者：
P. Lomenzo;Q. Takmeel;C. Fancher;Chuanzhen Zhou;N. Rudawski;S. Moghaddam;Jacob L. Jones;T. Nishida
铁电Si掺杂HfO2薄膜集成到三个不同的器件堆叠与p+ Ge衬底，p+ Si衬底，和TaN底部金属栅极。Si掺杂的HfO 2薄膜的铁电行为强烈依赖于底部界面。由于HfO2和Ge之间没有介电界面层，Si掺杂的HfO2薄膜在p+ Ge衬底上具有良好的铁电性能。Ge上的Si掺杂HfO2铁电薄膜的低电压操作和循环稳定性可以导致实现用于非易失性存储器应用的高性能、鲁棒的Ge铁电场效应晶体管。
Ferroelectric Si-doped HfO2 thin films are integrated into three different device stacks with a p+ Ge substrate, a p+ Si substrate, and a TaN bottom metal gate. The ferroelectric behavior of the Si-doped HfO2 thin films is strongly dependent on the bottom interfaces. The Si-doped HfO2 thin films have favorably improved ferroelectric properties on the p+ Ge substrate due to the lack of a dielectric interfacial layer between HfO2 and Ge. The low-voltage operation and cycling stability of Si-doped HfO2 ferroelectric thin films on Ge can lead to the realization of high performance, robust Ge ferroelectric field-effect transistors for nonvolatile memory applications.