Property database for single-element doping in ZnO obtained by automated first-principles calculations.
Property database for single-element doping in ZnO obtained by automated first-principles calculations.
复制标题
通过自动第一原理计算获得的ZnO中单元掺杂的属性数据库。
DOI:
10.1038/srep40907
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发表时间:
2017-01-23
影响因子:
4.6
通讯作者:
Han S
中科院分区:
文献类型:
--
作者:
Yim K;Lee J;Lee D;Lee M;Cho E;Lee HS;Nahm HH;Han S
Throughout the past decades, doped-ZnO has been widely used in various optical, electrical, magnetic, and energy devices. While almost every element in the Periodic Table was doped in ZnO, the systematic computational study is still limited to a small number of dopants, which may hinder a firm understanding of experimental observations. In this report, we systematically calculate the single-element doping property of ZnO using first-principles calculations. We develop an automation code that enables efficient and reliable high-throughput calculations on thousands of possible dopant configurations. As a result, we obtain formation-energy diagrams for total 61 dopants, ranging from Li to Bi. Furthermore, we evaluate each dopant in terms of n-type/p-type behaviors by identifying the major dopant configurations and calculating carrier concentrations at a specific dopant density. The existence of localized magnetic moment is also examined for spintronic applications. The property database obtained here for doped ZnO will serve as a useful reference in engineering the material property of ZnO through doping.