High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition
High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition
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DOI：
10.1143/apex.3.012301
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发表时间：
2009
影响因子：
2.3
通讯作者：
S. Miyajima;Junpei Irikawa;A. Yamada;M. Konagai
中科院分区：
文献类型：
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作者：
S. Miyajima;Junpei Irikawa;A. Yamada;M. Konagai
我们研究了氢化氧化铝（a- al1 - xox:H）作为高质量的晶体硅太阳能电池后表面钝化层。采用等离子体增强化学气相沉积（PECVD）技术，以三甲基铝（TMA）、二氧化碳（CO2）和氢气（H2）的混合物为基材，在约200℃的低温下制备了a- al1 - xox:H薄膜。沉积过程中CO2与TMA的比例以及薄膜沉积后的热处理是实现高质量钝化的关键因素。PECVD沉积的A - al1 - xox:H薄膜表面复合速度低，约为10 cm/s。
We investigated hydrogenated aluminum oxide (a-Al1-xOx:H) as a high quality rear surface passivation layer of crystalline silicon solar cells. The a-Al1-xOx:H films were deposited by plasma-enhanced chemical vapor deposition (PECVD) using a mixture of trimethylaluminum (TMA), carbon dioxide (CO2), and hydrogen (H2) at a low substrate temperature of about 200 °C. The ratio of CO2 to TMA during deposition and thermal annealing after the film deposition are the key factors in achieving high quality passivation. A 28-nm-thick a-Al1-xOx:H film deposited by PECVD showed a low surface recombination velocity of about 10 cm/s.