Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission
Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission
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DOI：
10.1103/physrevapplied.9.054006
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发表时间：
2017-08
影响因子：
4.6
通讯作者：
M. Fischer;A. Sperlich;H. Kraus;T. Ohshima;G. Astakhov;V. Dyakonov
中科院分区：
文献类型：
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作者：
M. Fischer;A. Sperlich;H. Kraus;T. Ohshima;G. Astakhov;V. Dyakonov
我们研究了碳化硅中硅空位相关自旋的泵浦效率。对于插入谐振频率为9.4GHz的微波腔中的晶体，在室温下获得了75的自旋布居数反转因子，饱和光泵浦功率约为350mW。在低温下，由于超过一分钟的异常长的自旋晶格弛豫时间，泵效率急剧增加。根据实验结果，我们找到了碳化硅脉塞可以工作在连续波模式下，并作为一个量子微波放大器的现实条件。
We investigate the pump efficiency of silicon vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the spin population inversion factor of 75 with the saturation optical pump power of about 350 mW is achieved at room temperature. At cryogenic temperature, the pump efficiency drastically increases, owing to an exceptionally long spin-lattice relaxation time exceeding one minute. Based on the experimental results, we find realistic conditions under which a silicon carbide maser can operate in continuous-wave mode and serve as a quantum microwave amplifier.