Doping effect on the carrier scattering in iron-based superconductors studied by charge transport
Doping effect on the carrier scattering in iron-based superconductors studied by charge transport
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通过电荷传输研究掺杂对铁基超导体载流子散射的影响
DOI：
10.1016/j.jpcs.2010.10.054
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
et al
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文献类型：
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作者：
S.Ishida;et al
为了揭示“载流子掺杂”在铁基超导体中的作用，我们研究了贫氧铁砷化物LnFeAsO1−y（Ln=La，Ce，Pr和Nd）在宽掺杂范围内的输运性质。我们发现，在这个系统中的“掺杂”的影响主要是在载流子散射，而不是载流子密度，在高Tccupates中的很大不同。在低Tc的La系中，低温电阻率主要由T2项控制，并观察到相当大的磁电阻。另一方面，在具有更高Tc的Nd系统中，载流子受到更强的散射，显示出接近T线性的电阻率和小的磁阻。这种强散射似乎与铁基系统中的高Tc超导性密切相关。
In order to reveal the role of “carrier doping” in the iron-based superconductors, we investigated the transport properties of the oxygen-deficient iron-arsenides LnFeAsO1−y(Ln=La, Ce, Pr and Nd) over a wide doping range. We found that the effect of “doping” in this system is mainly on the carrier scattering rather than carrier density, quite distinct from that in high-Tccuprates. In the case of La system with lower Tc, the low temperature resistivity is dominated by T2term and fairly large magnetoresistance is observed. On the other hand, in the Nd system with higher Tc, carriers are subject to stronger scattering showing nearly T-linear resistivity and small magnetoresistance. Such strong scattering appears intimately correlated with high-Tcsuperconductivity in the iron-based system.