Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy
Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy
复制标题
利用温度依赖性光致发光光谱定量描述 (GaIn)(NAs) 量子阱中的无序参数
DOI:
10.1063/1.2058192
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发表时间:
2005
影响因子:
3.2
通讯作者:
W. Stolz
中科院分区:
文献类型:
--
作者:
O. Rubel;M. Galluppi;S. Baranovskii;K. Volz;L. Geelhaar;H. Riechert;P. Thomas;W. Stolz
Photoluminescence in (GaIn)(NAs) quantum wells designed for laser emission was studied experimentally and theoretically. The observed temperature dependences of the luminescence Stokes shift and of the spectral linewidth evidence the essential role of disorder in the dynamics of the recombining excitations. The spatial and energy disorders can cause a localization of photocreated excitations supposedly in the form of excitons. Theoretical study of the exciton dynamics is performed via kinetic Monte Carlo simulations of exciton hopping and recombination in the manifold of localized states. Direct comparison between experimental spectra and theoretical calculations provides quantitative information on the energy scale of the potential fluctuations in (GaIn)(NAs) quantum wells. The results enable one to quantify the impact of annealing on the concentration of localized states and/or on the localization length of excitons in (GaIn)(NAs) quantum wells.