Performance improvement after nitridation treatment in HfO2-based resistance random-access memory
Performance improvement after nitridation treatment in HfO2-based resistance random-access memory
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DOI：
10.7567/apex.11.084101
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发表时间：
2018-08-01
影响因子：
2.3
通讯作者：
Sze, Simon M.
中科院分区：
文献类型：
--
作者：
Wang, Ming-Hui;Chang, Ting-Chang;Sze, Simon M.
为了改善高压氮化处理引起的电阻开关特性，在铂/汞/氮化钛电阻随机存储器(RRAM)器件中引入了氮原子。与类似的未经处理的HfO2器件相比，它具有更高的性能，包括更低的形成电压，更高的通断比，以及高耐久性的循环操作。电流-电压曲线拟合结果证实了氮化处理后载流子输运机制的不同。最后，提出了一个反应模型来解释氮原子的引入对RRAM开关性能的改善。(C)2018年日本应用物理学会
Nitrogen atoms were introduced into a Pt/HfO2/TiN resistance random-access memory (RRAM) device to improve the resistive switching characteristics induced by a high-pressure nitridation treatment. Compared with a similar untreated HfO2 device, it exhibited superior performance, including a lower forming voltage, a higher on/off ratio, and high-endurance cycle operations. Current-voltage curve-fitting results confirmed the difference of the carrier transport mechanisms after the nitridation treatment. Finally, a reaction model was proposed to explain the improvement of RRAM switching due to the introduction of nitrogen atoms. (C) 2018 The Japan Society of Applied Physics