Controlled deposition of gold nanowires on semiconducting and nonconducting surfaces.
Controlled deposition of gold nanowires on semiconducting and nonconducting surfaces.
复制标题
金纳米线在半导体和非导电表面上的受控沉积。
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
C. Sukenik
中科院分区：
文献类型：
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作者：
H. Taha;A. Lewis;C. Sukenik
推进纳米电子应用和系统的紧迫问题之一是开发一种在环境条件下以纳米级自由连接电子元件的简单方法，而不需要真空或电子或离子束操作步骤。这样的环境可能对分子电子电路的分子或生物分子成分具有有害影响。虽然有明确的进展，在连接结构，是纳米尺寸，新的方法，在这一领域的纳米技术与普遍适用性添加到武器库的工具，以解决这一长期存在的问题。本文解决了在环境条件下自由放置，与钢笔纳米光刻，120 nm的尺寸线的金纳米胶体沉积与精确配准在100 nm的间隙之间的两个250 nm宽的导电电极图案化的电子束光刻。
One of the pressing problems in advancing nanoelectronic applications and systems is to develop a simple means of freely connecting at a nanometric level electronic components under ambient conditions without the need for vacuum or electron or ion beam operational steps. Such environments may have detrimental effects on the molecular or biomolecular constituents of molecular electronic circuits. Although there has been defined progress in connecting structures that are of nanometric dimension, new methods in this area of nanotechnology with general applicability add to the arsenal of tools for addressing this standing problem. This paper addresses freely placing under ambient conditions, with fountain pen nanolithography, a 120 nm dimension line of gold nanocolloids deposited with precise registration in a 100 nm gap between two 250 nm wide conducting electrodes patterned by electron beam lithography.