Growth of silicon oxide on hydrogenated silicon during lithography with an atomic force microscope
Growth of silicon oxide on hydrogenated silicon during lithography with an atomic force microscope
复制标题
用原子力显微镜光刻过程中氢化硅上氧化硅的生长
DOI：
10.1116/1.590325
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发表时间：
1998
影响因子：
1.4
通讯作者：
P. Doppelt
中科院分区：
文献类型：
--
作者：
F. Marchi;V. Bouchiat;H. Dallaporta;V. Safarov;D. Tonneau;P. Doppelt
本文在原子力显微镜下，对氢化硅表面氧化硅条的生长进行了实验研究。发现氧化物的形成发生在负尖端偏压高于电压阈值（约| - 2|V）时，对应于从衬底表面去除氢所需的最小电场。我们展示了尖端样品距离和大气化学成分对生长的影响。臭氧富集的大气导致生长动力学增强。
We present an experimental study of growth of silicon oxide strips drawn on hydrogenated silicon under the voltage biased tip of an atomic force microscope operating in ambient atmosphere. Oxide formation was found to occur at negative tip biases above a voltage threshold around |−2|V, corresponding to the minimum electric field required for hydrogen removal from the substrate surface. We show the influence of tip-sample distance and of the chemical composition of the atmosphere on the growth. An ozone enriched atmosphere leads to a growth kinetics enhancement.