Electrochemical investigations of copper etching by Cu(NH3)4Cl2 in ammoniacal solutions
Electrochemical investigations of copper etching by Cu(NH3)4Cl2 in ammoniacal solutions
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Cu(NH3)4Cl2 在氨溶液中蚀刻铜的电化学研究
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
A. Irzho
中科院分区：
文献类型：
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作者：
A. Darchen;R. Drissi;A. Irzho
用循环伏安法研究了铜在氯化铜氨性缓冲溶液中的腐蚀机理。为了更好地了解铜的氧化过程，采用了增加溶液铜含量(最高可达0.5m)和增加铜电极厚度的实验。无论铜(II)的浓度是多少，还原都发生在两个单电子阶段，依次形成了铜(I)和铜(0)。氨的浓度是一个重要的参数。提高铜/氨比有利于过渡固体化合物的形成。铜的预期两步氧化只在电镀铜的薄层中观察到。腐蚀溶液中腐蚀电流的测定表明，铜的氧化涉及到固体亚铜化合物的形成。
Cyclic voltammetry has been employed to investigate the mechanism of copper etching in ammoniacal buffered solutions of cupric chloride. Experiments involving an increase in the solution copper content (up to 0.5 m) and in the thickness of the copper electrode have been used to obtain a better understanding of the copper oxidation. Whatever the Cu(ii) concentration, the reduction occurred in two one-electron stages leading successively to Cu(i) and Cu(0). The concentration of ammonia was an important parameter. Increasing the ratio of Cu : NH3 favoured the formation of transient solid compounds. The expected two-step oxidation of copper was observed only for thin layers of electroplated copper. The determination of the corrosion current in etching solutions suggests that copper oxidation involves the formation of solid cuprous compounds.