Magnetoelectric Switching Energy of Antiferromagnetic Cr2O3 Used for Spintronic Logic Devices and Memory
Magnetoelectric Switching Energy of Antiferromagnetic Cr2O3 Used for Spintronic Logic Devices and Memory
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DOI：
10.1002/pssr.202100396
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发表时间：
2021-10
期刊：
影响因子：
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通讯作者：
S. Ye
中科院分区：
文献类型：
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作者：
S. Ye
磁电(ME)开关能是反铁磁(AFM)Cr2O_3垂直交换耦合异质结实际应用中最重要的方面，但目前对其认识还不够充分。本研究首先阐明了外加磁场和电场与表面自旋方向(磁区状态)以及垂直交换偏置符号之间的关系。其次，讨论了Cr2O_3及其垂直交换耦合异质结的非对称ME开关行为。最后，建立了一个模型来考察上述系统在ME切换过程中所需的能量。结果表明，Cr2O_3的表面状态和微观结构是影响系统ME开关能的主要因素。这项工作有助于实现用于自旋电子器件和存储器的原子力显微镜Cr2O3的低能量信息写入。
Magnetoelectric (ME) switching energy is the most important aspect in the practical application of antiferromagnetic (AFM) Cr2O3‐based perpendicular exchange‐coupling heterostructures, but it is not fully understood. This study firstly clarifies the relation between the applied magnetic/electric field and surface spin directions (domain status) as well as the perpendicular exchange bias sign in this system. Secondly, the asymmetric ME switching behavior for both Cr2O3 and its perpendicular exchange‐coupling heterostructures is discussed. Finally, a model is developed to examine the energy required during the ME switching of the above system. It was found that the surface status and microstructure of Cr2O3 are essential factors influencing the system's ME switching energy. This work contributes to realizing low‐energy information writing for AFM Cr2O3 used in spintronic logic devices and memory.