Evaluation of charge-integrating amplifier with silicon MOSFETs for cryogenic readout
Evaluation of charge-integrating amplifier with silicon MOSFETs for cryogenic readout
复制标题
用于低温读出的硅 MOSFET 电荷积分放大器的评估
DOI：
10.1117/12.317306
复制
发表时间：
1998
期刊：
影响因子：
--
通讯作者：
M. Kawada
中科院分区：
文献类型：
--
作者：
M. Noda;H. Shibai;T. Watabe;T. Hirao;H. Yoda;H. Nagata;T. Nakagawa;M. Kawada
为红外成像测量仪的焦平面仪器研制了低噪声、低功耗的低温读出电子器件。我们测量了几种类型的硅MOSFET在低温下的静态特性和噪声谱，其中硅JFET由于载流子冻结而不能很好地工作。在载流子冻结温度以下观察到n沟道MOSFET的“扭结”行为，而p沟道MOSFET的“扭结”行为不明显。结果表明，p沟道MOSFET可用于红外远红外阵列的低温读出电子学，具有较好的性能。与这些MOSFET集成的放大器在2K时表现出低噪声，每个MOSFET的低功耗为1(MU)W。现在，我们设计和评估几种用CMOS工艺制造的用于低温读出的电路。
Low-noise and low-power cryogenic readout electronics are developed for a focal plane instrument of the IR Imaging Surveyor. We measured the static characteristics and the noise spectra of several types of silicon MOSFETs at the cryogenic temperature where silicon JFETs do not work well due to the carrier freeze-out. The 'kink' behavior of n- channel MOSFETs was observed below the carrier freeze-out temperature, but it was not obvious for the p-channel MOSFET. It was demonstrated the p-channel MOSFETs can be used for the cryogenic readout electronics of the IRIS's far-IR array with an acceptable performance. The amplifier integrated with these MOSFETs showed low-noise at 2K under a low power consumption of 1 (mu) W per MOSFET. We now design and evaluate several circuits that are fabricated by the CMOS process for cryogenic readout.