I. Diffusion problems associated with the growth of crystals from dilute solution
I. Diffusion problems associated with the growth of crystals from dilute solution
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I. 与稀溶液中晶体生长相关的扩散问题
DOI：
10.1080/14786440108520269
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发表时间：
1953
期刊：
影响因子：
--
通讯作者：
A. Seeger
中科院分区：
文献类型：
--
作者：
A. Seeger
从具有平面的溶液中生长的晶体在表面的某些部分必须具有相当大的过饱和度。引入过饱和数σ来度量最大过饱和度。对于非常稀的溶液中的二维生长，给出了计算σ的一般方法;它适用于正多边形的生长，表面上台阶的生长，以及板的边缘上的生长。对于三维生长，只能粗略估计正多面体的过饱和度;据估计，立方体或正八面体表面上的最大过饱和度在顶点与无穷大之间的浓度差的0.25和0.4之间。
Summary Crystals growing from solutions with plane faces must have considerable supersaturation at some parts of the surface. A supersaturation number σ is introduced to give a measure of the maximum supersaturation. For two-dimensional growth in very dilute solutions a general method for evaluating σ is given; it is applied to the growth of regular polygons, to the growth of a step on a surface, and to growth on the edge of a plate. For three-dimensional growth only a rough estimate for the supersaturation occurring with regular polyhedra can be given; it is estimated that the maximum supersaturation on the surface of a cube or regular octahedron is between 0·25 and 0·4 of the concentration difference between the vertices and infinity.