Semisuperjunction MOSFETs: new design concept for lower on-resistance and softer reverse-recovery body diode
Semisuperjunction MOSFETs: new design concept for lower on-resistance and softer reverse-recovery body diode
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DOI：
10.1109/ted.2003.815126
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发表时间：
2003-08
影响因子：
3.1
通讯作者：
W. Saito;I. Omura;S. Aida;S. Koduki;M. Izumisawa;T. Ogura
中科院分区：
文献类型：
--
作者：
W. Saito;I. Omura;S. Aida;S. Koduki;M. Izumisawa;T. Ogura
提出了一种新的超结（SJ）结构，与传统的SJ结构相比具有显著的优点，并将其用于功率开关器件。在所提出的结构（半SJ结构）中，n掺杂层连接到SJ结构的底部。实验和仿真结果表明，半SJ结构比传统SJ MOSFET具有更低的导通电阻和更软的体二极管恢复特性。所制备的半SJMOSFET的击穿电压为690 V，实现了28%，低于传统的SJMOSFET具有相同的深宽比。体二极管的软系数也提高了五倍。由于MOSFET具有低导通电阻和软恢复体二极管特性，因此对于H桥拓扑应用（如开关电源和小型逆变器系统）非常有吸引力。
A new superjunction (SJ) structure offering remarkable advantages compared with the conventional SJ structure is proposed and demonstrated for a power-switching device. In the proposed structure (semi-SJ structure), an n-doped layer is connected to the bottom of the SJ structure. According to the results of experiment and simulation, the semi-SJ structure has both lower on-resistance and softer recovery of body diode than conventional SJ MOSFETs. The fabricated semi-SJ MOSFETs with breakdown voltage of 690 V realize on-resistance 28% lower than that of the conventional SJ MOSFET with same aspect ratio. The softness factor of the body diode is also improved by a factor of five. The proposed MOSFET is very attractive for H bridge topology applications, such as switching mode power supplies and small inverter systems, thanks to the low on-resistance and the soft recovery body diode.