AlN∕AlGaN∕GaN metal-insulator-semiconductor high-electron-mobility transistor on 4in. silicon substrate for high breakdown characteristics
AlN∕AlGaN∕GaN metal-insulator-semiconductor high-electron-mobility transistor on 4in. silicon substrate for high breakdown characteristics
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DOI：
10.1063/1.2730751
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发表时间：
2007-04
影响因子：
4
通讯作者：
S. L. Selvaraj;Tsuneo Ito;Y. Terada;T. Egawa
中科院分区：
文献类型：
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作者：
S. L. Selvaraj;Tsuneo Ito;Y. Terada;T. Egawa
AlN闪烁AlGaN闪烁GaN金属绝缘体半导体高电子迁移率晶体管（MIS-HEMT）生长在4英寸。已经证明了硅衬底。该异质结构具有高的面载流子密度和小的表面粗糙度。AlN scinAlGaN scinGaN MIS-HEMT的最大漏极电流密度（IDSmax）为361 mA scinmm，最大非本征漏极电流密度（gmmax）为152 mS scinmm。由于面载流子密度的增加，2DEG沟道向AlGaN/GaN界面移动，导致阈值电压正移（− 2.6至−1.8V）。在230 V的高击穿电压下，观察到AlN scinAlGaN scinGaN MIS-HEMT的两个数量级的低栅漏电流和减小的漏电流崩溃。
AlN∕AlGaN∕GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) grown on 4in. silicon substrate have been demonstrated. The heterostructure exhibited high sheet carrier density with small surface roughness. AlN∕AlGaN∕GaN MIS-HEMT exhibited maximum drain current density (IDSmax) of 361mA∕mm and maximum extrinsic transconductance (gmmax) of 152mS∕mm. Due to the increase of sheet carrier density, the 2DEG channel shifts towards the AlGaN/GaN interface resulting in positive shift of the threshold voltage (−2.6to−1.8V). Two orders of magnitude low gate leakage current and reduced drain current collapse with high breakdown voltage of 230V have been observed on AlN∕AlGaN∕GaN MIS-HEMTs.