Electronic band structures of GaInAsP/InP vertically stacked multiple quantum wires with strain-compensating barriers
Electronic band structures of GaInAsP/InP vertically stacked multiple quantum wires with strain-compensating barriers
复制标题
具有应变补偿势垒的GaInAsP/InP垂直堆叠多量子线的电子能带结构
DOI：
10.1063/1.1590061
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发表时间：
2003
影响因子：
3.2
通讯作者：
S. Arai
中科院分区：
文献类型：
--
作者：
A. Haque;H. Yagi;T. Sano;T. Maruyama;S. Arai
使用包括应变弛豫的 8 能带 k⋅p 理论计算了通过蚀刻和再生长方法制造的压缩应变 GaInAsP/InP 量子线的能带结构。研究了应变补偿势垒和垂直堆叠多个线层对能带结构的影响。研究发现，由于应变弛豫依赖于势垒区中的应变补偿量和垂直堆叠中的线层数量，与应变量子膜不同，应变量子线的能带结构取决于这些因素。使用我们的计算，无需任何拟合参数，可以准确地解释在垂直堆叠的多个量子线结构中实验观察到的大能量蓝移的线宽依赖性。发现由于垂直堆叠多根量子线而导致的发射光谱的额外展宽可以忽略不计。我们的结果表明，势垒层中的应变补偿可以有效地使用...
Energy-band structures of compressively strained GaInAsP/InP quantum wires fabricated by etching and regrowth method have been calculated using an 8 band k⋅p theory including strain relaxation. The effects of strain-compensating barriers and vertically stacking multiple wire layers on band structures are investigated. It is found that due to the dependence of strain relaxation on the amount of strain compensation in barrier regions and on the number of wire layers in the vertical stack, unlike strained quantum films, the energy-band structures of strained quantum wires are dependent on these factors. Experimentally observed wire-width dependence of the large energy blueshift in vertically stacked multiple quantum-wire structures is accurately explained using our calculations without any fitting parameter. Additional broadening in the emission spectra due to vertically stacking multiple quantum wires is found to be negligible. Our results show that strain compensation in barrier layers may be used effectiv...