O-band N-rich silicon nitride MZI based on GST
O-band N-rich silicon nitride MZI based on GST
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DOI：
10.1063/1.5140350
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发表时间：
2020-03-02
影响因子：
4
通讯作者：
Baldycheva, Anna
中科院分区：
文献类型：
--
作者：
Faneca, Joaquin;Bucio, Thalia Dominguez;Baldycheva, Anna
我们通过实验展示了一种基于富氮氮化硅平台并结合 Ge 2Sb 2Te 5 的 O 波段马赫-曾德干涉仪 (MZI)，用于未来的光通信应用。该器件的运行依赖于使用相变材料单元控制波导的损耗，该材料单元可以从非晶态（低损耗）变为晶态（高损耗）。 MZI 光学构件的非晶态 (ON) 和晶态 (OFF) 之间的消光比高达 11dB。对于TM偏振，测得MZI结构每单元长度的插入损耗在OFF状态下高达0.87dB/μm，在ON状态下低至0.064dB/μm。
We have experimentally demonstrated an O-band Mach-Zehnder interferometer (MZI) based on an N-rich silicon nitride platform combined withGe 2Sb 2Te 5 for future optical communication applications. The device operation relies on controlling the waveguide's losses using a phase change material cell, which can be changed from amorphous (low-loss) to crystalline (high-loss). An extinction ratio as high as 11dB was obtained between the amorphous (ON) and the crystalline (OFF) states of the MZI optical building block. The insertion loss of the MZI structure per cell unit length was measured to be as high as 0.87dB/mu m in the OFF state and as low as 0.064dB/mu m in the ON state for TM polarization.