In situ X-ray diffraction study of silicon at pressures up to 15.5 GPa and temperatures up to 1073 K
In situ X-ray diffraction study of silicon at pressures up to 15.5 GPa and temperatures up to 1073 K
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DOI：
10.1103/physrevb.68.020102
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发表时间：
2003-07
影响因子：
3.7
通讯作者：
G. Voronin;C. Pantea;T. W. Żerda;Liping Wang;Yusheng Zhao
中科院分区：
文献类型：
--
作者：
G. Voronin;C. Pantea;T. W. Żerda;Liping Wang;Yusheng Zhao
在6 - 15.5吉帕的压力范围以及高达1073开尔文的温度下，对硅进行了原位X射线衍射测量。这些结果被用于改进硅的相图。找到了在293 - 973开尔文温度区间内Si II相稳定的压力范围。确定了Si I - Si II、Si II - Si XI、Si XI - Si V平衡线的位置以及Si I - Si II - Si L、Si II - Si XI - Si L、Si XI - Si V - Si L三相点。
In situ x-ray diffraction measurements of silicon were conducted in the pressure range 6-15.5 GPa and at temperatures up to 1073 K. The results were used to improve the phase diagram for silicon. The pressure range where the Si I I phase is stable in the temperature interval 293-973 K was found. The positions of the Si I -Si I I , Si I I -Si X I , Si X I -Si V equilibrium lines and the Si I -Si I I -Si L , Si I I -Si X I -Si L , Si X I -Si V -Si L triple points were determined.