Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin Film Transistor for Inactivation of Electrical Defects at Super Low-Temperature
Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin Film Transistor for Inactivation of Electrical Defects at Super Low-Temperature
复制标题
水下激光退火对多晶硅薄膜晶体管超低温电缺陷钝化的影响
DOI：
10.1109/jdt.2012.2236883
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
et al.
中科院分区：
文献类型：
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作者：
Emi Machida;et al.
我们提出了水下激光退火（WLA）的超低温钝化多晶硅薄膜晶体管（poly-Si TFT）的电缺陷。该技术可以大幅度降低灭活过程的温度，并且只需要紫外激光和去离子水。我们在制作了顶栅型多晶硅TFT之后进行了WLA。WLA后，多晶硅TFT的场效应迁移率从52增加到72厘米。将TFT表面暴露于由激光照射产生的水蒸气中，导致电缺陷被水蒸气中的活性物种灭活。
We propose underwater laser annealing (WLA) for the inactivation of electrical defects in polycrystalline silicon thin-film transistors (poly-Si TFTs) at super low-temperature. This technique can reduce the temperature of inactivation process drastically, and it requires only UV laser and deionized water. We performed WLA after the fabrication of top-gate type poly-Si TFTs. After WLA, the field-effect mobility of poly-Si TFTs increased from 52 to 72 cm. The TFT surface was exposed to water vapor which was generated by laser irradiation, resulting that electrical defects were inactivated by active species in water vapor.