Plasma Activated Wafer Bonding of Silicon: In Situ and Ex Situ Processes
Plasma Activated Wafer Bonding of Silicon: In Situ and Ex Situ Processes
复制标题
等离子激活硅晶圆键合：原位和异位工艺
DOI：
10.1149/1.2357064
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
P. Lindner
中科院分区：
文献类型：
--
作者：
V. Dragoi;P. Lindner
等离子体激活晶圆键合在过去十年中由于重要的工艺温度降低而引起了人们的高度关注。其主要优点是在工业上具有一定的应用可行性。从这种新工艺中受益的一个例子是硅熔合：通过使用等离子体激活，使键合过程的温度和时间降低到符合工业制造要求的值。一种新开发的工艺允许在等离子活化室中结合两个衬底，被认为是一种非常有趣的方法，可用于许多应用，特别是在工程衬底制造领域。
Plasma activated wafer bonding generated a high interest in last decade due to the important process temperature reduction. With the main advantage of bringing some applications at industrial degree of feasibility. An example of process which benefits from this new process is silicon fusion bonding: by using plasma activation the bond process temperature and time are reduced at values which make wafer bonding compatible with industrial manufacturing requirements. A newly developed process allowing bonding of two substrates in the plasma activation chamber is foreseen as a very interesting approach for numerous applications, especially in the field of engineered substrates fabrication.