A Three-Stage Charge Pump with Forward Body Biasing in 28 nm UTBB FD-SOI CMOS
A Three-Stage Charge Pump with Forward Body Biasing in 28 nm UTBB FD-SOI CMOS
复制标题
28 nm UTBB FD-SOI CMOS 中具有正向体偏置的三级电荷泵
DOI：
10.1109/lascas51355.2021.9459174
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
A. Petraglia
中科院分区：
文献类型：
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作者：
Carlos A. Pinheiro;F. Olivera;A. Petraglia
能量收集技术提供了用于为无电池电路供电或甚至用于为诸如电池或超级电容器的存储元件充电的解决方案。在本文中，一个三级电荷泵，这是适合于热电和光伏能量收集进行了28 nm超薄埋氧（UTBB）全耗尽绝缘体上硅（FD-SOI）CMOS工艺。利用FD-SOI衬底的特性，采用正向体偏置（FBB）技术来提高开关电导。大量的仿真结果验证了在最小输入电压为200 mV时采集系统的正常工作，并在输入电压为300 mV和负载电流为100 nA时显示出56%的最大效率峰值。
Energy harvesting techniques provide solutions for powering battery-free circuits or even for charging storage elements such as batteries or super capacitors. In this paper, a three-stage charge pump that is appropriate for thermoelectric and photo-voltaic energy harvesting is carried out in a 28 nm ultra-thin buried oxide (UTBB) fully-depleted silicon-on-insulator (FD-SOI) CMOS technology. Taking advantage of the FD-SOI substrate characteristics, the forward-body-biasing (FBB) technique is used in order to improve the switch conductances. Extensive simulation results validate the proper operation of the harvesting system at minimum input voltage of 200 mV and show a maximum efficiency peak of 56% at input voltage of 300 mV and load current of 100 nA.