Surface Energy Engineering in the Solvothermal Deoxidation of Graphene Oxide

Surface Energy Engineering in the Solvothermal Deoxidation of Graphene Oxide
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DOI:
10.1002/admi.201300078
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发表时间:
2014-06
影响因子:
5.4
通讯作者:
Liangxu Lin;Xuelin Zheng;Shaowei Zhang;D. Allwood
Liangxu Lin;Xuelin Zheng;Shaowei Zhang;D. Allwood
中科院分区:
材料科学3区
文献类型:
--
作者:
Liangxu Lin;Xuelin Zheng;Shaowei Zhang;D. Allwood

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提出了一种在溶液中实现单分散、深度还原氧化石墨烯(GO)高产率的方法。它克服了在溶剂热脱氧中经常观察到的GO的分散性和低效还原的许多问题,尽管以前曾使用过强还原剂(如Fe2+、S或联氨)。结果表明,GO的不完全还原很可能是由于部分还原的GO的团聚/自组装造成的,这也造成了分散性差。GO还原对溶剂表面能高度敏感,通过实验和经验计算,将溶剂表面能调节到85.6MJ/m2左右(100℃),可以得到完全还原的GO。这些计算还允许计算其他温度下GO深度还原的适当溶剂表面能。这种方法使GO的溶剂热脱氧成为大规模、经济地生产高度分散的单层石墨烯的潜在途径。
A route to achieving high yields of monodisperse, deeply deoxidized graphene oxide (GO) in solution is presented. It overcomes many of the problems of dispersibility and inefficient reduction of GO in solvothermal deoxidation that are usually observed, despite the previous use of strong reducing agents (e.g. Fe2+, S or hydrazine). It is shown that the incomplete deoxidation is most likely due to agglomeration/self‐assembly of partially reduced GO, which also creates poor dispersibility. GO deoxidation is found to be highly sensitive to the solvent surface energy and, through experiments and empirical calculations, tuning the solvent surface energy to around 85.6 mJ/m2 (at 100 °C) leads to fully deoxidized GO. These calculations also allow appropriate solvent surface energies to be calculated for other temperatures for deep deoxidation of GO. This approach makes solvothermal deoxidation of GO a potential route to large scale, economic production of highly disperse monolayered graphene.