Modification of alkaneselenolate monolayers by low-energy electrons
Modification of alkaneselenolate monolayers by low-energy electrons
复制标题
低能电子对烷烃硒醇盐单分子层的修饰
DOI：
10.1021/jp077234q
复制
发表时间：
2008
影响因子：
3.7
通讯作者：
M. Zharnikov
中科院分区：
文献类型：
--
作者：
T. Weidner;A. Shaporenko;N. Ballav;A. Ulman;M. Zharnikov
采用同步加速器x射线光电子能谱和近边x射线吸收精细结构能谱研究了低能（50 eV）电子辐照对烷烯酸酯（AS）自组装单层（sam）的影响。以十二烷酸酯（C12Se）的SAM为测试体系，以类似的十二烷酸酯（C12S） SAM为对照。研究发现，AS - SAMs中的烷基基质和头基-底物界面都受到多种密切相关的辐照诱导过程的影响，这些过程大多遵循伪一级动力学，并在高辐照剂量下趋于平稳。得到了最突出的过程的截面，并发现在2−3 × 10-16 cm2的范围内。这些数值与类似的烷硫酸盐（AT） SAMs的参数非常接近，后者在低能电子辐照下表现出类似的行为。同时，对辐照诱导过程中指纹参数的饱和度值进行了分析。
The effect of low-energy (50 eV) electron irradiation on alkaneselenolate (AS) self-assembled monolayers (SAMs) was studied by synchrotron-based X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure spectroscopy. As a test system, SAMs of dodecaneselenolate (C12Se) were used, and an analogous dodecanethiolate (C12S) SAM was taken as a reference. Both the alkyl matrix and headgroup−substrate interface in AS SAMs were found to be affected by a variety of closely interrelated irradiation-induced processes, which mostly follow a pseudo first-order kinetics and level off at high irradiation doses. The cross-sections of the most prominent processes were obtained and found to be in a range of 2−3 × 10-16 cm2. The values are very close to the parameters for analogous alkanethiolate (AT) SAMs, which exhibit similar behavior upon exposure to low-energy electron irradiation. At the same time, the saturation values of the fingerprint parameters for some irradiation-induced processes in AS SAM...