Electron beam induced deposition from W(CO)(6) at 2 to 20 keV and its applications
Electron beam induced deposition from W(CO)(6) at 2 to 20 keV and its applications
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DOI：
10.1116/1.589154
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发表时间：
1996-03-01
影响因子：
1.4
通讯作者：
Ahmed, H
中科院分区：
文献类型：
--
作者：
Hoyle, PC;Cleaver, JRA;Ahmed, H
研究了 W(CO)(6) 的电子束诱导沉积，其束能量介于 2 至 20 keV 之间，并具有一系列曝光剂量，以研究沉积厚度和电导率对能量的依赖性以及沉积电导对累积曝光剂量的依赖性。在较低的束能量下产生较大的沉积厚度和较高的电导率，这归因于较低能量下较高的二次电子产率。发现沉积物厚度与暴露剂量成线性比例。电导对曝光剂量（沉积物厚度）的初始依赖性是非线性的，并且归因于从不连续膜到连续膜的变化。对于背向散射的增加，对于与电子射程相比较小的沉积物厚度，随后电导对曝光剂量的依赖性呈线性，这意味着掩埋阻止了沉积物中部分分解的 W(CO)(6) 分子的进一步分解。透射电子显微镜检查表明沉积物的结构取决于束扫描条件。沉积物被用来形成用于 Si 的 CF4 等离子蚀刻的掩模，而掺杂 GaAs 衬底上的沉积物被发现可以形成理想因子为 1.40 的肖特基接触，从而能够演示金属半导体场效应晶体管栅极的修复。 (C) 1996 年美国真空协会。
Electron beam induced deposition from W(CO)(6) was studied for beam energies between 2 and 20 keV and a range of exposure doses, to investigate the dependence of deposit thickness and electrical conductivity on energy and the dependence of deposit conductance on cumulative exposure dose. Larger deposited thicknesses and higher conductivities were produced at the lower beam energies and were attributed to the higher secondary electron yield at lower energies. The deposit thickness was found to scale linearly with exposure dose. The initial dependence of conductance on exposure dose land deposit thickness) was nonlinear and was attributed to the change from a discontinuous to a continuous film. and to increased backscattering, The subsequent dependence of conductance on exposure dose was linear for deposit thicknesses which were small compared with the electron range, implying that burial precludes the further decomposition of partially decomposed W(CO)(6) molecules incorporated in the deposit. Transmission electron microscope examination showed that the structure of the deposits depended on the beam scanning conditions. Deposits were used to form a mask for CF4 plasma etching of Si, while deposits on a doped GaAs substrate were found to form a Schottky contact with an ideality factor of 1.40, enabling the repair of a metal-semiconductor field-effect transistor gate to be demonstrated. (C) 1996 American Vacuum Society.