Identification of interfacial and bulk effects in modulating fatigue behaviors of Pb(Zr0.52Ti0.48)O3 thin films
Identification of interfacial and bulk effects in modulating fatigue behaviors of Pb(Zr0.52Ti0.48)O3 thin films
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DOI：
10.1063/1.2403235
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发表时间：
2007-01
影响因子：
3.2
通讯作者：
Y. Wang;F. Yuan;T. Wei;Congshan Zhu;K. F. Wang;Yanjie Xia;Junkai Liu
中科院分区：
文献类型：
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作者：
Y. Wang;F. Yuan;T. Wei;Congshan Zhu;K. F. Wang;Yanjie Xia;Junkai Liu
研究了Pt/LaNiO3/Pb(Zr0.52Ti0.48)O-3/LaNiO3/Pt （Pt/LNO/PZT/LNO/Pt）和Pt/PZT/Pt结构在不同温度T、电压V-amp和频率f下的极化疲劳行为，以阐明缺陷相关的界面效应和体效应。Pt/LNO/PZT/LNO/Pt结构在较高的T、较大的V-amp和较低的f时，其抗疲劳性能得到增强，而Pt/PZT/Pt结构在较低的T、较小的V-amp和较高的f时，具有较好的抗疲劳性能。缺陷化学是导致切换疲劳的原因之一，主要表现为界面效应和体效应，导致两种类型的明显相反的疲劳响应。(c) 2007年美国物理学会。
The polarization fatigue behaviors of Pt/LaNiO3/Pb(Zr0.52Ti0.48)O-3/LaNiO3/Pt (Pt/LNO/PZT/LNO/Pt) and Pt/PZT/Pt structures under different temperatures T, voltages V-amp, and frequencies f are investigated in order to clarify defect-related interfacial and bulk effects. The fatigue endurance of the Pt/LNO/PZT/LNO/Pt structure is enhanced at higher T, larger V-amp, and lower f, whereas for the Pt/PZT/Pt structure a better antifatigue performance is obtained at lower T, smaller V-amp, and higher f. The defect chemistry as one of the origins of the switching fatigue is demonstrated by the predominant interfacial effect and bulk effect resulting in two types of markedly opposite fatigue responses. (c) 2007 American Institute of Physics.