A CMOS High-Power Broadband 260-GHz Radiator Array for Spectroscopy
A CMOS High-Power Broadband 260-GHz Radiator Array for Spectroscopy
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DOI：
10.1109/jssc.2013.2272864
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发表时间：
2013-12-01
影响因子：
5.4
通讯作者：
Afshari, Ehsan
中科院分区：
文献类型：
--
作者：
Han, Ruonan;Afshari, Ehsan
报道了一种采用65 nm体CMOS工艺的高功率宽带260 GHz辐射源。该源是一个阵列的8个谐波振荡器通过四个130 GHz的正交振荡器相互耦合。该谐振子采用了一种新型的自馈结构，同时满足了基波振荡和二次谐波产生的最佳条件。260 GHz的信号通过8个片上缝隙天线辐射，并在连接在芯片背面的半球形硅透镜内同相组合。与许多太赫兹光谱仪中的激光脉冲驱动光电导发射器类似，该光源的辐射也可以通过芯片上产生的窄脉冲进行调制，从而实现宽的辐射带宽。在没有调制的情况下，该芯片实现了1.1 mW的实测连续波辐射功率和15.7 dBm的EIRP。在调制条件下，测得源的带宽为24.7GHz。该散热器阵列使用1.2 V电源供电，消耗0.8 W直流电源。
A high-power broadband 260-GHz radiation source using 65-nm bulk CMOS technology is reported. The source is an array of eight harmonic oscillators with mutual coupling through four 130-GHz quadrature oscillators. Based on a novel self-feeding structure, the harmonic oscillator simultaneously achieves the optimum conditions for the fundamental oscillation and the 2nd-harmonic generation. The signals at 260 GHz radiate through eight on-chip slot antennas, and are in-phase combined inside a hemispheric silicon lens attached at the backside of the chip. Similar to the laser pulse-driven photoconductive emitter in many THz spectrometers, the radiation of this source can also be modulated by narrow pulses generated on chip, which achieves broad radiation bandwidth. Without modulation, the chip achieves a measured continuous-wave radiated power of 1.1 mW, and an EIRP of 15.7 dBm. Under modulation, the measured bandwidth of the source is 24.7 GHz. This radiator array consumes 0.8-W DC power from a 1.2-V supply.