Frictional drag in dilute bilayer 2D hole systems.
Frictional drag in dilute bilayer 2D hole systems.
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稀双层二维孔系统中的摩擦阻力。
DOI：
10.1103/physrevlett.90.086801
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发表时间：
2002
影响因子：
8.6
通讯作者：
A. Stern
中科院分区：
文献类型：
--
作者：
E. Hwang;S. Sarma;V. Braude;A. Stern
我们开发了一种稀双层 GaAs 空穴系统中两个二维空穴层之间的摩擦阻力理论，包括空穴-空穴和空穴-声子相互作用的影响。我们的计算表明，与相应的电子阻力结果相比，空穴阻力跨电阻率显着增强。这种增强源于交换引起的单层压缩性的重正化以及单层电导率对密度的强烈依赖性。我们还讨论了空穴-声子相互作用对阻力温度依赖性的影响。我们的计算结果与最近的实验观察结果具有合理的定量一致性。
We develop a theory for frictional drag between two 2D hole layers in a dilute bilayer GaAs hole system, including effects of hole-hole and hole-phonon interactions. Our calculations suggest significant enhancement of hole drag transresistivity over the corresponding electron drag results. This enhancement originates from the exchange induced renormalization of the single-layer compressibility and the strong dependence of single-layer conductivity on density. We also address the effect of hole-phonon interaction on the drag temperature dependence. Our calculated results are in reasonable quantitative agreement with recent experimental observations.