Theory of Short-Channel Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect-Transistors
Theory of Short-Channel Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect-Transistors
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DOI：
10.1143/jjap.46.1437
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发表时间：
2007-04
影响因子：
1.5
通讯作者：
Guangxi Hu;Ran Liu;T. Tang;S. Ding;Lingli Wang
中科院分区：
文献类型：
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作者：
Guangxi Hu;Ran Liu;T. Tang;S. Ding;Lingli Wang
建立了一个具有围栅的金属氧化物半导体场效应晶体管（MOSFET）模型。模型的解析解通过求解泊松方程，采用级数展开。在考虑短沟道效应的情况下，得到了电势、电场和阈值电压的解析表达式。结果表明，在小半径范围内，晶体管完全耗尽，阈值电压随半径的增大或单位面积氧化层电容的减小而增大。
A model for a metal–oxide–semiconductor field-effect-transistor (MOSFET) with a surrounding gate (SG) is developed. Analytical solutions to the model are obtained by solving Poisson's equation using series expansion. Taking short-channel effects into account, the analytical expressions for electric potential, electric field, and threshold voltage are obtained. It is found that the transistor is fully depleted for a small radius, and the threshold voltage increases as the radius increases or as the oxide capacitance per unit area decreases.