Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor
Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor
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金属氧化物半导体场效应晶体管结漏电流随机电报噪声的机理
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
R. Yamada
中科院分区：
文献类型：
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作者：
Y. Mori;H. Yoshimoto;K. Takeda;R. Yamada
对亚微米尺度金属氧化物半导体场效应晶体管（MOSFET）关断状态下反向偏置结漏电流中与空穴陷阱相关的随机电报噪声（RTN）的机理进行了研究。研究发现，这种结漏电流的RTN，即可变结漏（VJL），是由施加空穴积累偏置到MOSFET的栅极引起的。该结果表明，在硅表面附近的栅极氧化物中捕获的空穴影响沟道表面电势，并导致在界面态处产生的产生-复合（g-r）电流的波动。g-r电流的波动被观察为VJL。热载体胁迫下VJL的发生率增加。在此基础上，建立了一个能更具体地定量解释VJL机理的VJL模型。
Evidence is given for the mechanism of hole-trap-related random telegraph noise (RTN) in reverse-biased junction leakage current occurring in the off-state of sub-micron scaled metal-oxide-semiconductor field-effect transistor (MOSFET). It was found that such RTN in junction leakage current, namely, variable junction leakage (VJL), is induced by applying hole-accumulation bias to the gate of the MOSFET. This result indicates that a hole captured in the gate oxide near the silicon surface influences the channel surface potential and causes fluctuation in generation-recombination (g-r) current generated at interface states. The fluctuation in g-r current is observed as VJL. It was also found that occurrence rate of VJL increases under hot-carrier stress. On the basis of these results, a model for VJL that can more concretely explain the mechanism of VJL quantitatively was developed.