Catalyst-free growth of nanographene films on various substrates
Catalyst-free growth of nanographene films on various substrates
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DOI：
10.1007/s12274-010-0086-5
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发表时间：
2011-03
期刊：
影响因子：
9.9
通讯作者：
Lianchang Zhang;Zhiwen Shi;Yi Wang;Rong Yang;D. Shi;Guangyu Zhang
中科院分区：
文献类型：
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作者：
Lianchang Zhang;Zhiwen Shi;Yi Wang;Rong Yang;D. Shi;Guangyu Zhang
我们开发了一种新方法，可以直接在各种基底上生长均匀的石墨烯薄膜，如绝缘体，半导体，甚至金属，而不使用任何催化剂。使用远程等离子体增强化学气相沉积（r-PECVD）系统在相对低的温度下进行生长，使得石墨烯膜的沉积能够达到4英寸晶片规模。扫描隧道显微镜（STM）证实，该薄膜是由横向尺寸为数十纳米的纳米晶石墨烯颗粒组成。纳米石墨烯的生长机制类似于通过PECVD方法生长的金刚石的生长机制，尽管在石墨烯的情况下形成sp2碳原子而不是金刚石中的sp3碳原子。这种生长方法简单，成本低，可扩展，并可能在薄膜电阻器，气体传感器，电极材料和透明导电膜等领域有潜在的应用。
We have developed a new method to grow uniform graphene films directly on various substrates, such as insulators, semiconductors, and even metals, without using any catalyst. The growth was carried out using a remote plasma enhancement chemical vapor deposition (r-PECVD) system at relatively low temperatures, enabling the deposition of graphene films up to 4-inch wafer scale. Scanning tunneling microscopy (STM) confirmed that the films are made up of nanocrystalline graphene particles of tens of nanometers in lateral size. The growth mechanism for the nanographene is analogous to that for diamond grown by PECVD methods, in spite of sp2 carbon atoms being formed in the case of graphene rather than sp3 carbon atoms as in diamond. This growth approach is simple, low-cost, and scalable, and might have potential applications in fields such as thin film resistors, gas sensors, electrode materials, and transparent conductive films.