Thickness and temperature dependent electrical properties of ZrS2 thin films directly grown on hexagonal boron nitride
Thickness and temperature dependent electrical properties of ZrS2 thin films directly grown on hexagonal boron nitride
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DOI：
10.1007/s12274-016-1178-7
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发表时间：
2016-07
期刊：
影响因子：
9.9
通讯作者：
Yiming Zhu;Xinsheng Wang;Mei Zhang;C. Cai;Liming Xie
中科院分区：
文献类型：
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作者：
Yiming Zhu;Xinsheng Wang;Mei Zhang;C. Cai;Liming Xie
Two-dimensional ZrS2materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature dependent transport properties of ZrS2multilayers that were directly deposited on hexagonal boron nitride (h-BN) by chemical vapor deposition. Hysteresis-free gate sweeping, metalinsulator transition, andT–γ(γ~ 0.82–1.26) temperature dependent mobility were observed in the ZrS2films.
