Growth and Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As
Growth and Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As
复制标题
四元合金磁半导体(InGaMn)As的生长及性能
DOI：
10.1143/jjap.41.l24
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发表时间：
2001
影响因子：
1.5
通讯作者：
Masaaki Tanaka
中科院分区：
文献类型：
--
作者：
S. Ohya;H. Shimizu;Y. Higo;Jiaming Sun;Masaaki Tanaka
研究了用低温分子束外延（LT-MBE）技术在GaAs衬底和InP衬底上生长的四元合金磁性半导体（InGaMn）As的生长和性能。（InGaMn）As薄膜在低于30 K时具有铁磁性，表现出较强的磁光效应。Mn浓度x低于4%的[（InyGa 1-y）1-xMnx]As的晶格常数比具有相同In/Ga含量比的InyGa 1-yAs的晶格常数稍小。我们还获得了非常光滑的表面形貌的近晶格匹配的（InGaMn）的薄膜生长在InP衬底上，这是重要的应用与III-V光电子集成的薄膜型磁光器件。
We have studied the growth and properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on both GaAs substrates and InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). (InGaMn)As thin films were ferromagnetic below ∼ 30 K, exhibiting a strong magneto-optical effect. The lattice constant of [(InyGa1-y)1-xMnx]As, whose Mn concentration x is below 4%, is slightly smaller than that of InyGa1-yAs with the same In/Ga content ratio. We have also obtained very smooth surface morphology of nearly lattice-matched (InGaMn)As thin films grown on InP substrates, which is important for application to thin-film-type magneto-optical devices integrated with III–V opto-electronics.